single igbtmod? hvigbt module 1800 amperes/1700 volts CM1800HC-34N 1 rev. 4/09 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 outline drawing and circuit diagram a dd f e c 42 3 eg c 1 b g h n t r 4(c) 2(c) 3(e) e g c p 1(e) q s j v u w x k (4 typ) m (3 typ) l (6 pla ces) dimensions inches millimeters a 5.190.02 130.00.5 b 5.510.02 140.00.5 c 4.880.01 124.00.25 d 2.240.01 57.00.25 e 1.570.008 40.00.2 f 0.790.004 20.00.1 g 1.920.008 48.80.2 h 0.420.008 10.650.2 j 0.410.008 10.350.2 k m8 metric m8 l 0.28 dia. 7.0 dia. description: powerex igbtmod? modules are designed for use in switching applications. each module consists of one igbt transistor in a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: traction medium voltage drives high voltage power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM1800HC-34N is a 1700v (v ces ), 1800 ampere single igbtmod? power module. type current rating v ces amperes volts (x 50) cm 1800 34 dimensions inches millimeters m m4 metric m4 n 2.420.012 61.50.3 p 1.50+0.04/-0.0 38.0+1.0/-0.0 q 0.20.008 5.00.2 r 0.65 min. 16.5 min. s 0.30 min. 7.7 min. t 0.710.008 18.00.2 u 1.160.02 29.50.5 v 0.600.008 15.00.2 w 0.210.008 5.20.2 x 1.10+0.04/-0.0 28.0+1.0/-0.0
CM1800HC-34N single igbtmod? hvigbt module 1800 amperes/1700 volts 2 rev. 4/09 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol CM1800HC-34N units unction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c perating temperature t opr -40 to 125 c collector-emitter voltage (v e = 0v) v ces 100 volts ate-emitter voltage (v ce = 0v) v es 20 volts collector current (dc t c = 5c) i c 1800 amperes ea collector current (ulse) i cm 300 amperes emitter current (t c = 25c) i e 1800 amperes emitter surge current (ulse) i em 300 amperes maximum collector dissipation (t c = 25c it art t j(max)
CM1800HC-34N single igbtmod? hvigbt module 1800 amperes/1700 volts 3 rev. 4/09 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cuto current i ces v ce = v ces v e = 0v t j = 25c .0 ma v ce = v ces v e = 0v t j = 125c 4.5 12.0 ma ate-emitter threshold voltage v e(th) i c = 180ma v ce = 10v .0 .0 8.0 volts ate eaage current i es v e = v es v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 1800a v e = 15v t j = 25c 2.15 2.8 volts i c = 1800a v e = 15v t j = 125c 2.4 volts input capacitance c ies v ce = 10v v e = 0v 24 n utput capacitance c oes = 100h 14.4 n reerse transer capacitance c res t j = 25c 4.2 n total ate charge v cc = 850v i c = 1800a v e = 15v 10.2 c emitter-collector voltage v ec i e = 1800a v e = 0v t j = 25c 2. 3.3 volts i e = 1800a v e = 0v t j = 125c 2.3 volts turn-n delay time t d(on) v cc = 850v i c = 1800a 1.0 s turn-n rise time t r v e1 = -v e2 = 15v r (on) = 0. thermal characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance unction to case r th(j-c) er it 12.5 thermal resistance unction to case r th(j-c) d er di 28.0 contact thermal resistance case to in r th(c-) er module thermal rease applied 11.0 mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units comparatie tracing index cti 00 clearance 1.5 mm creepage distance 32.0 mm internal inductance c-e(int) 1 nh internal ead resistance r c-e(int) 0.14 m
CM1800HC-34N single igbtmod? hvigbt module 1800 amperes/1700 volts 4 rev. 4/09 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 collector current, i c , (amperes) output characteristics (typical) 800 400 1 600 1 200 0 3600 06 35 4 12 collector-emitter voltage, v ce(sat) , (volts) t j = 25c 2000 2400 2800 3200 v ge = 20v 9v 10v 12v 15v 8v 0.5 1. 0 1. 5 0 4.0 3.5 3.0 free-wheel diode forward characteristics (typical) 0 4000 3000 1000 2000 v ge = 0v t j = 25c t j = 125c 2.0 2.5 10 0 200 0 700 600 500 0 4000 3000 1000 2000 300 400 collector-emitter voltage, v ces , (volts) emitter current, i e , (amperes) free-wheel diode reverse recovery energy characteristics (typical) v cc = 850v v ge = 15v r g = 0.9 l s = 100nh t j = 125c 10 0 200 0 700 600 500 0 4000 3000 1000 2000 300 400 10 0 200 0 700 600 500 01 0 8 6 24 300 400 v cc = 850v v ge = 15v r g = 0.9 l s = 100nh t j = 125c reverse recovery energy, e rec , (mj/pulse) emitter current, i e , (amperes) free-wheel diode reverse recovery energy characteristics (typical) v cc = 850v v ge = 15v i c = 1800a l s = 100nh t j = 125c 10 0 200 0 700 600 500 01 0 8 6 24 300 400 v cc = 850v v ge = 15v i c = 1800a l s = 100nh t j = 125c 800 400 1 200 0 3600 61 4 8 79 0 3000 2000 1000 4000 13 12 11 10 2400 2000 1 600 2800 3200 reverse recovery energy, e rec , (j/pulse) gate resistance, r g , ( ) gate resistance, r g , ( ) free-wheel diode reverse recovery charge characteristics (typical) reverse recovery charge, q rr , (j/pulse) emitter current, i e , (amperes) free-wheel diode reverse recovery charge characteristics (typical) reverse recovery charge, q rr , (j/pulse) collector current, i c , (amperes) gate-emitter voltage, v ge , (volts) transfer characteristics (typical) t j = 25c t j = 125c v ce = 20v switching time, t d(on) , (ns) turn-on delay time vs. collector current (typical) 10 1 10 0 10 -1 collector current, i c , (amperes) switching time, t d(off) , (ns) turn-off delay time vs. collector current (typical) v cc = 850v v ge = 15v r g(off) = 2.2 r g(on) = 0.9 l s = 100nh t j = 125c 0 3000 2000 1000 4000 10 1 10 0 10 -1 v cc = 850v v ge = 15v r g(off) = 2.2 r g(on) = 0.9 l s = 100nh t j = 125c collector current, i c , (amperes)
CM1800HC-34N single igbtmod? hvigbt module 1800 amperes/1700 volts 5 rev. 4/09 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 collector current, i c , (amperes) switching time, t f , (ns) fall time vs. collector current (typical) collector current, i c , (amperes) switching time, t r , (ns) rise time vs. collector current (typical) 2000 800 400 1200 1600 0 4000 3000 2000 1000 collector current, i c , (amperes) switching loss, e off , (mj/pulse) switching loss (off) vs. collector current (typical) 0 collector current, i c , (amperes) switching loss, e on , (mj/pulse) switching loss (on) vs. collector current (typical) switching loss, e off , (mj/pulse) gate resistance, r g , ( ) switching loss, e on , (mj/pulse) gate resistance, r g , ( ) collect or-emi tter vo lta ge, v ce , (v ol ts) ca pa ci t ance, c ies , c oes , c res , (pf) 10 -1 10 0 10 1 10 2 capacitance vs. collector-emitter voltage (typical) 10 3 10 1 10 0 10 2 c ies c oes c res v ge = 15v f = 100khz t j = 25c collector-emitter voltage, v ces , (volts) collector current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) v cc = 850v v ge = 15v r g(off) = 2.2 r g(on) = 0.9 l s = 100nh t j = 125c 2000 800 400 1200 1600 0 4000 3000 2000 1000 0 v cc = 850v v ge = 15v r g(off) = 2.2 r g(on) = 0.9 l s = 100nh t j = 125c 3500 2500 2000 1500 3000 1000 0 500 10 68 4 2 0 3500 2500 2000 1500 3000 1000 0 500 10 68 4 2 0 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0 0.5 4000 3000 2000 1000 0 v cc = 850v v ge = 15v i c = 1800a l s = 100nh t j = 125c v cc = 850v v ge = 15v i c = 1800a l s = 100nh t j = 125c v ge = 15v t j = 25c t j = 125c switching loss (off) vs. gate resistance (typical) switching loss (on) vs. gate resistance (typical) v cc = 850v v ge = 15v r g(off) = 2.2 r g(on) = 0.9 l s = 100nh t j = 125c v cc = 850v v ge = 15v r g(off) = 2.2 r g(on) = 0.9 l s = 100nh t j = 125c gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 02 46 81 01 21 4 16 12 8 4 0 03 000 2000 1000 4000 10 1 10 0 10 -1 03 000 2000 1000 4000 10 1 10 0 10 -1 i c = 1200a v cc = 850v t j = 25c
CM1800HC-34N single igbtmod? hvigbt module 1800 amperes/1700 volts 6 rev. 4/09 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 time, (s) transient imped ance, rth (j-c) 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance characteristics (igbt & fwdi) 1.2 1.0 0.4 0 0.2 0.6 0.8 single pulse t c = 25c igbt = r th(j-c) q = 12.5k/kw fwdi = r th(j-c) d = 28k/kw reverse recovery current, i rr , (amperes) emitter-collector voltage, v ec , (volts) reverse recovery safe operating area (typical) 2000 1500 1000 500 0 collector current, i c , (amperes) collector-emitter voltage, v ce , (volts) reverse bias safe operating area (typical) 4500 4000 3000 3500 2000 2500 0 1000 1500 500 4500 4000 3000 3500 2000 2500 0 1000 1500 500 2000 1500 1000 500 0 v cc 1200v v ge = 15v r g 2.2 t j = 125c v cc 1200v di/dt 4200a/s t j = 125c
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